Explore Intel Fellow Mark Bohr's presentation from Intel Developer Forum 2014, with details and benefits of the new 14 nm transistor process and how the tri-gate fins are now taller, thinner, and closer together, enabling more performance, less active power, and longer battery life for greater computing experiences.
See how the new transistor process and tri-gate fin design enable greater computing experiences.
Learn more about Intel® Optane™ technology to see how this non-volatile memory solution enables fast access to large sets of data.
View a history of storage challenges and breakthroughs leading up to this 3D XPoint™ memory media-based solution.
Intel and Micron announce 3D XPoint™, a faster, denser, and non-volatile memory breakthrough.
Intel 3-D transistors manufactured at 22nm ensure the pace of technology advancement for years to come.
Minimize concerns of cost, effort, and complexity. (v.1, Oct. 2011)